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Full-featured Single Fets MOSFET boasting 5.1mOhm @ 10A, 10V, 2.2V @ 250µA, optimized for 29 nC @ 10 V.

Full-featured Single Fets MOSFET boasting 5.1mOhm @ 10A, 10V, 2.2V @ 250µA, optimized for 29 nC @ 10 V.

₹ 71.94 ₹ 98.35
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Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs

SISA14DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 20A PPAK1212-8 PowerPAK® 1212-8

A proud member of the TrenchFET® series, this component thrives under -55°C to 150°C (TJ) conditions.

  • Mfr Part #: SISA14DN-T1-GE3
  • Manufacturer: Vishay Siliconix
  • Details: MOSFET N-CH 30V 20A PPAK1212-8
  • Package: Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
  • Series: TrenchFET®
  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package / Case: PowerPAK® 1212-8
  • Supplier Device Package: PowerPAK® 1212-8
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Drain to Source Voltage (Vdss): 30 V

A reliable asset in TrenchFET® systems thanks to its durable packaging and design.



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